 Samsung Introduces 90-Nanometer High Performance Smart Card IC June 12, 2008 | User rating: not shown ( 2 vote(s) ) | No comments yet
Samsung Electronics Co., Ltd., a leader in advanced semiconductor technology, announced today its 90-nanometer smart card IC with high data storage capacity for subscriber identity module (SIM) cards and mobile ... | |
 Researchers achieve atomic spectroscopy on a chip June 01, 2007 | User rating: 4.5 / 5 after 10 vote(s)
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Researchers at the University of California, Santa Cruz, have performed atomic spectroscopy with integrated optics on a chip for the first time, guiding a beam of light through a rubidium vapor cell integrated ... | |
 IMEC reports 40 microwatt from micromachined piezoelectric energy harvester June 21, 2007 | User rating: 4.5 / 5 after 12 vote(s)
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IMEC has fabricated an energy harvester to generate energy from mechanical vibrations by using micromachining technology. The harvester comes together with a model which can be used to optimize the device ... | |
Novel low temperature laser processing of silicon for hybrid organic/inorganic solar cells May 30, 2007 | User rating: 4.5 / 5 after 12 vote(s)
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Researchers at the Advanced Technology Institute (ATI) at the University of Surrey have reported a new technique to UV laser processing of thin film silicon for applications such as display control circuits and solar cells, ... | |
 Samsung Begins World's First 60nm-DRAM Mass Production March 02, 2007 | User rating: 3.4 / 5 after 5 vote(s)
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Samsung Electronics announced today that it has begun mass producing the industry’s first 1Gigabit (Gb) DDR2 DRAM (dynamic random access memory) using 60 nanometer (nm)–class process technology. | |
 Remembering the future November 15, 2007 | User rating: 4.8 / 5 after 12 vote(s)
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As electronics designers cram more and more components onto each chip, current technologies for making random-access memory (RAM) are running out of room. European researchers have a strong position in a new ... | |
 Cooking up new MEMS November 29, 2007 | User rating: 4.9 / 5 after 10 vote(s)
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Microelectromechanical systems (MEMS) are tiny components etched from silicon. Production is extremely complex, sometimes with hundreds of steps, each with dozens of parameters. One European project has developed ... | |
SanDisk to Launch 43-Nanometer Multi-Level NAND Flash Memory in Mass Production February 06, 2008 | User rating: 4.5 / 5 after 6 vote(s)
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SanDisk Corporation today announced the introduction of Multi-Level (MLC) NAND flash memory using 43 nanometer process technology co-developed with Toshiba Corporation in Japan. | |
Flash memory gets boost from x4 technology May 16, 2006 | User rating: 4 / 5 after 15 vote(s)
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Memory cards, USB ports and iPods are about to get smaller and cheaper to produce, according to a company that has just unveiled 4 bit per cell NAND flash technology. | |
Toshiba develops basic technology for world's smallest flash memory element in 10nm generation December 12, 2007 | User rating: 4.5 / 5 after 6 vote(s)
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Toshiba Corporation today announced that it has developed a new double tunneling layer technology applicable to future 10nm generation flash memories. | |
Cooler, faster, cheaper: Researchers advance process to manufacture silicon chips December 03, 2007 | User rating: 3.3 / 5 after 20 vote(s)
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The next generation of laptops, desk computers, cell phones and other semiconductor devices may get faster and more cost-effective with research from Clemson University. | |
Wireless World: Next-generation tracking June 16, 2006 | User rating: not shown ( 4 vote(s) ) | No comments yet
The second generation of wireless package tracking technology -- radio frequency identification (RFID) gear -- is emerging rapidly, changing the way manufacturers monitor shipments. | |
 Trenches create memory space September 12, 2006 | User rating: 2.8 / 5 after 6 vote(s)
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The requirements are tightening up. Computers are having to become more and more efficient. A new technology boosts memory capacity: etching the silicon wafer creates deep trenches that increase its capacity ... | |
AMD and IBM Detail Early Results Using Immersion and Ultra Low-K in 45nm Chips December 13, 2006 | User rating: 3.7 / 5 after 11 vote(s)
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At the International Electron Device Meeting today, IBM and AMD presented papers describing the use of immersion lithography, ultra-low-K interconnect dielectrics, and multiple enhanced transistor strain techniques for application ... | |
Circuit board materials may like it hot (or not) June 09, 2006 | User rating: 4.6 / 5 after 7 vote(s)
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Electrical circuits may act differently in Arizona than they do in Alaska--potentially affecting the performance of computers and other electronics. A new technique identifies and quantifies an important cause of this temperature ... | |
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