Micron, Intel try out 50 nm NAND memory July 25, 2006 | User rating: 2.2 / 5 after 9 vote(s)
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Semiconductor giants Micron and Intel said Tuesday they were sampling the first NAND flash memory chips built on 50-nanometer processing technology. | |
![]() IMEC, AIXTRON set important step towards low-cost GaN power devices June 03, 2008 | User rating: not shown ( 2 vote(s) ) | No comments yet
IMEC, Europe's leading independent research center in the field of nanoelectronics, and AIXTRON, the world leader in metal-organic chemical-vapor deposition (MOCVD) equipment, have demonstrated the growth ... | |
![]() Chipmakers shrug off economic worries June 08, 2006 | User rating: not rated yet | No comments yet
Oil prices continue to go up, and there is growing concern about inflation putting a damper on economic growth across the globe. Yet while it may be easy enough to be wary of global growth prospects, the electronics ... | |
![]() Intel, Micron First to Deliver Sub-40 Nanometer NAND Flash Memory Device May 29, 2008 | User rating: 3.2 / 5 after 9 vote(s)
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Today Intel Corporation and Micron Technology, Inc. introduced the industry's first sub-40 nanometer NAND memory device, unveiling a 34nm 32 gigabit multi-level cell chip. This process technology was jointly ... | |
![]() Exposing the Sensitivity of Extreme Ultraviolet Photoresists June 26, 2008 | User rating: 3 / 5 after 5 vote(s)
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Researchers at the National Institute of Standards and Technology (NIST) have confirmed that the photoresists used in next-generation semiconductor manufacturing processes now under development are twice as ... | |
![]() Fujitsu Develops Low-power CMOS Technology For 32nm Generation June 17, 2008 | User rating: not shown ( 1 vote(s) ) | No comments yet
Fujitsu today announced the development of low-power CMOS technology for 32nm-generation logic LSIs, which makes it possible to minimize the number of necessary manufacturing processes for LSIs, and without ... | |
![]() Samsung Introduces 90-Nanometer High Performance Smart Card IC June 12, 2008 | User rating: not shown ( 2 vote(s) ) | No comments yet
Samsung Electronics Co., Ltd., a leader in advanced semiconductor technology, announced today its 90-nanometer smart card IC with high data storage capacity for subscriber identity module (SIM) cards and mobile ... | |
Toshiba Develops 60GHz Receiver Technology Using CMOS Device June 15, 2007 | User rating: 4.8 / 5 after 5 vote(s)
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Toshiba Corporation today announced new technology that opens the way to manufacturing powerful ICs for the millimeter-waveband. | |
![]() Sharp Develops Mass-Production Technology for Triple-Junction Thin-Film Solar Cells January 25, 2007 | User rating: 4.1 / 5 after 23 vote(s)
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Sharp Corporation has successfully developed mass-production technology for stacked triple-junction thin-film solar cells by turning a conventional two-active-layer structure (amorphous silicon plus microcrystalline ... | |
Sematech Reveals Details on Practical High-K Metal Gate Systems for 45nm And Beyond August 20, 2007 | User rating: 4.1 / 5 after 8 vote(s)
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Building on their successful CMOS solution for gate‑first, thermally stable, high-k dual metal gates, SEMATECH researchers have released further data that portends a new era in which future transistor scaling is dominated ... | |
![]() Samsung Opens Largest Wafer Plant In Austin, Texas June 15, 2007 | User rating: 4.3 / 5 after 6 vote(s)
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Samsung Electronics announced the opening of the largest 300mm NAND flash memory wafer plant in Austin, Texas on Thursday, in ceremonies that included Texas Governor Rick Perry and Samsung Electronics Vice ... | |
![]() Panasonic Develops New Gallium Nitride Power Transistor with Normally-off Operation December 15, 2006 | User rating: 3.7 / 5 after 11 vote(s)
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Panasonic today announced the development of a Gallium Nitride (GaN) power transistor with normally-off operation. This device is the world's first demonstration of the conductivity modulation in GaN as a novel ... | |
![]() Toshiba develops the world's fastest speed embedded DRAM technology February 06, 2008 | User rating: not shown ( 4 vote(s) ) | No comments yet
Toshiba Corporation today announced that it has realized the world's fastest circuit technology for embedded DRAM for System LSI, achieving a speed of 833MHz at 32Mb density. The technology will be applied ... | |
![]() IMEC obtains record conversion efficiency of 24.7% for GaAs solar cells on Ge substrate February 25, 2008 | User rating: not shown ( 2 vote(s) ) | User comments: 1
IMEC has realized a single-junction GaAs solar cell on a Ge substrate with a record conversion efficiency of 24.7%. The efficiency was measured and confirmed by NREL (National Renewable Energy Laboratory, ... | |
![]() Panasonic develops White Color Power LEDs by employing GaN Substrates March 05, 2007 | User rating: 4.2 / 5 after 12 vote(s)
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Panasonic today announced that it has developed a blue LED element by employing GaN substrates for the first time in the industry. | |
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