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Technology / Semiconductors news 1234

Novel memory device is set to rival transistor-switched silicon-based memory

June 25, 2008 | User rating: 4.5 / 5 after 24 vote(s) | User comments: 2

Working with an international group of researchers, Professor Gehan Amaratunga has produced a novel memory device which is set to rival transistor-switched silicon-based memory.


Microchip is helping restore vision to the blind

June 24, 2008 | User rating: 4.8 / 5 after 24 vote(s) | User comments: 5

Last year, Wentai Liu watched as surgeons implanted a microchip he had designed into the eye of a blind patient. For Liu, a professor of electrical engineering in the Baskin School of Engineering at the University of California, ...


Sony develops new back-illuminated CMOS image sensor

June 11, 2008 | User rating: not shown ( 1 vote(s) ) | No comments yet

Sony Corporation today announced the development of a back-illuminated CMOS image sensor (pixel size: 1.75µm square pixels, five effective mega pixels, 60 frames/s) with significantly enhanced imaging characteristics, ...


Intel, Samsung, TSMC Reach Agreement for 450mm Wafer Manufacturing Transition

May 06, 2008 | User rating: 3.4 / 5 after 10 vote(s) | User comments: 1

Intel Corp., Samsung Electronics and TSMC today announced they have reached agreement on the need for industry-wide collaboration to target a transition to larger, 450mm-sized wafers starting in 2012. The transition to larger ...


The future of computing -- carbon nanotubes and superconductors to replace the silicon chip

March 28, 2008 | User rating: 4.1 / 5 after 12 vote(s) | No comments yet

The future of computing is under the spotlight at the Institute of Physics’ Condensed Matter and Materials Physics conference at the Royal Holloway College of the University of London on 26-28 March.


AMD, Partners Produce Test Chip Using EUV Lithography

February 26, 2008 | User rating: 4.3 / 5 after 21 vote(s) | User comments: 3

AMD, working together with its research partner, IBM, announced it has produced a working test chip utilizing Extreme Ultra-Violet (EUV) lithography for the critical first layer of metal connections across the entire chip. ...


Breaking the performance barrier of 22-nm CMOS technology

February 19, 2008 | User rating: 4.4 / 5 after 25 vote(s) | User comments: 1

A major initiative has been launched in Europe with a top-ranked project called DUALLOGIC, Dual channel CMOS for (sub)-22 nm high performance logic.


SanDisk to Launch 43-Nanometer Multi-Level NAND Flash Memory in Mass Production

February 06, 2008 | User rating: 4.5 / 5 after 6 vote(s) | No comments yet

SanDisk Corporation today announced the introduction of Multi-Level (MLC) NAND flash memory using 43 nanometer process technology co-developed with Toshiba Corporation in Japan.


Intel, STMicroelectronics Deliver Industry's First Phase Change Memory Prototypes

February 06, 2008 | User rating: 4.3 / 5 after 20 vote(s) | User comments: 1

Intel Corporation and STMicroelectronics reached a key industry milestone today as they began shipping prototype samples of a future product using a new, innovative memory technology called Phase Change Memory (PCM). The ...


Copper's not coping: new chips call on light speed

January 18, 2008 | User rating: 4.2 / 5 after 32 vote(s) | No comments yet

The tiny copper wires that connect different areas of an integrated circuit may soon limit microchip-processing speeds. So European researchers have developed technologies to produce and combine semiconductor ...


Toshiba develops basic technology for world's smallest flash memory element in 10nm generation

December 12, 2007 | User rating: 4.5 / 5 after 6 vote(s) | No comments yet

Toshiba Corporation today announced that it has developed a new double tunneling layer technology applicable to future 10nm generation flash memories.


Cooler, faster, cheaper: Researchers advance process to manufacture silicon chips

December 03, 2007 | User rating: 3.3 / 5 after 20 vote(s) | User comments: 1

The next generation of laptops, desk computers, cell phones and other semiconductor devices may get faster and more cost-effective with research from Clemson University.


Cooking up new MEMS

November 29, 2007 | User rating: 4.9 / 5 after 10 vote(s) | No comments yet

Microelectromechanical systems (MEMS) are tiny components etched from silicon. Production is extremely complex, sometimes with hundreds of steps, each with dozens of parameters. One European project has developed ...


Remembering the future

November 15, 2007 | User rating: 4.8 / 5 after 12 vote(s) | No comments yet

As electronics designers cram more and more components onto each chip, current technologies for making random-access memory (RAM) are running out of room. European researchers have a strong position in a new ...


Toshiba develops new MRAM device which opens the way to giga-bits capacity

November 06, 2007 | User rating: 4.5 / 5 after 43 vote(s) | User comments: 2

Toshiba Corporation today announced important breakthroughs in key technologies for magnetoresistive random access memory (MRAM), a promising, next-generation semiconductor memory device.


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