SanDisk to Launch 43-Nanometer Multi-Level NAND Flash Memory in Mass Production February 06, 2008 | User rating: 4.5 / 5 after 6 vote(s)
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SanDisk Corporation today announced the introduction of Multi-Level (MLC) NAND flash memory using 43 nanometer process technology co-developed with Toshiba Corporation in Japan. | |
 IMEC realized full CMOS multiple antenna receiver for 60 GHz February 06, 2008 | User rating: not shown ( 4 vote(s) ) | No comments yet
At today’s IEEE International Solid State Circuit Conference, IMEC introduced its prototype of a 60GHz multiple antenna receiver, and invites industry to join its 60GHz research program. The 60GHz band offers ... | |
Intel, STMicroelectronics Deliver Industry's First Phase Change Memory Prototypes February 06, 2008 | User rating: 4.3 / 5 after 20 vote(s)
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Intel Corporation and STMicroelectronics reached a key industry milestone today as they began shipping prototype samples of a future product using a new, innovative memory technology called Phase Change Memory (PCM). The ... | |
Infineon Ships Industry's First CMOS RF Switches with GaAs Performance February 04, 2008 | User rating: not shown ( 3 vote(s) ) | No comments yet
Today Infineon Technologies announced it is shipping in volume the world’s first RF switches that are manufactured in a CMOS-based process on silicon wafers and offer the equivalent performance of RF switches manufactured ... | |
 Copper's not coping: new chips call on light speed January 18, 2008 | User rating: 4.2 / 5 after 32 vote(s)
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The tiny copper wires that connect different areas of an integrated circuit may soon limit microchip-processing speeds. So European researchers have developed technologies to produce and combine semiconductor ... | |
 Measurement innovations add up to big savings for semiconductors January 09, 2008 | User rating: not shown ( 1 vote(s) ) | No comments yet
A new report from the National Institute of Standards and Technology shows that investment in measurement science has and will continue to have a dramatic effect on innovation, productivity, growth and competitiveness ... | |
ASML, Zeiss and Canon Cross-license Lithography Equipment Patent Portfolios December 21, 2007 | User rating: not shown ( 1 vote(s) ) | No comments yet
ASML Holding NV and Carl Zeiss SMT today announce that each has signed an agreement with Canon for the global cross-license of patents in their respective fields of semiconductor lithography and optical components, used to ... | |
 IBM Alliances Announce Advancement in High-K/Metal Gate Technology December 14, 2007 | User rating: 4.6 / 5 after 33 vote(s)
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IBM and its joint development partners -- AMD, Chartered Semiconductor Manufacturing, Freescale, Infineon, and Samsung -- announced an innovative approach to speed the implementation of a breakthrough material ... | |
NEC Develops New Full Low-k Cu-interconnect Structure December 13, 2007 | User rating: not shown ( 1 vote(s) ) | No comments yet
NEC have developed a new Silica-Carbon Composite (SCC) film capable of blocking Cu-atom diffusion into the dielectric films of LSI interconnects. Use of the SCC film establishes an ultimate full-low-k (FLK) Cu interconnect ... | |
Toshiba develops basic technology for world's smallest flash memory element in 10nm generation December 12, 2007 | User rating: 4.5 / 5 after 6 vote(s)
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Toshiba Corporation today announced that it has developed a new double tunneling layer technology applicable to future 10nm generation flash memories. | |
 IMEC increases performance of high-k metal gate planar CMOS and FinFETs December 11, 2007 | User rating: not shown ( 3 vote(s) ) | No comments yet
At today’s IEEE International Electron Devices Meeting, IMEC reports significant progress in improving the performance of planar CMOS using hafnium-based high-k dielectrics and tantalum-carbide metal gates ... | |
Cooler, faster, cheaper: Researchers advance process to manufacture silicon chips December 03, 2007 | User rating: 3.3 / 5 after 20 vote(s)
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The next generation of laptops, desk computers, cell phones and other semiconductor devices may get faster and more cost-effective with research from Clemson University. | |
 NEC Develops World's Fastest SRAM-Compatible MRAM With Operation Speed of 250MHz November 30, 2007 | User rating: 5 / 5 after 6 vote(s)
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NEC Corporation today announced that it has succeeded in developing a new SRAM-compatible MRAM that can operate at 250MHz, the world's fastest MRAM operation speed. | |
 Sandwich technique eases 3D optical chip fabrication November 29, 2007 | User rating: not shown ( 3 vote(s) ) | No comments yet
Complex three-dimensional (3D) integrated circuits involving both optical and electronic elements are now easier to make, thanks to a “wafer bonding” technique developed by a European research consortium. ... | |
 Cooking up new MEMS November 29, 2007 | User rating: 4.9 / 5 after 10 vote(s)
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Microelectromechanical systems (MEMS) are tiny components etched from silicon. Production is extremely complex, sometimes with hundreds of steps, each with dozens of parameters. One European project has developed ... | |
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