NEC Develops New Full Low-k Cu-interconnect Structure December 13, 2007 | User rating: not shown ( 1 vote(s) ) | No comments yet
NEC have developed a new Silica-Carbon Composite (SCC) film capable of blocking Cu-atom diffusion into the dielectric films of LSI interconnects. Use of the SCC film establishes an ultimate full-low-k (FLK) Cu interconnect ... | |
Toshiba develops basic technology for world's smallest flash memory element in 10nm generation December 12, 2007 | User rating: 4.5 / 5 after 6 vote(s)
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Toshiba Corporation today announced that it has developed a new double tunneling layer technology applicable to future 10nm generation flash memories. | |
 IMEC increases performance of high-k metal gate planar CMOS and FinFETs December 11, 2007 | User rating: not shown ( 3 vote(s) ) | No comments yet
At today’s IEEE International Electron Devices Meeting, IMEC reports significant progress in improving the performance of planar CMOS using hafnium-based high-k dielectrics and tantalum-carbide metal gates ... | |
Cooler, faster, cheaper: Researchers advance process to manufacture silicon chips December 03, 2007 | User rating: 3.3 / 5 after 20 vote(s)
| User comments: 1
The next generation of laptops, desk computers, cell phones and other semiconductor devices may get faster and more cost-effective with research from Clemson University. | |
 NEC Develops World's Fastest SRAM-Compatible MRAM With Operation Speed of 250MHz November 30, 2007 | User rating: 5 / 5 after 6 vote(s)
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NEC Corporation today announced that it has succeeded in developing a new SRAM-compatible MRAM that can operate at 250MHz, the world's fastest MRAM operation speed. | |
 Sandwich technique eases 3D optical chip fabrication November 29, 2007 | User rating: not shown ( 3 vote(s) ) | No comments yet
Complex three-dimensional (3D) integrated circuits involving both optical and electronic elements are now easier to make, thanks to a “wafer bonding” technique developed by a European research consortium. ... | |
 Cooking up new MEMS November 29, 2007 | User rating: 4.9 / 5 after 10 vote(s)
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Microelectromechanical systems (MEMS) are tiny components etched from silicon. Production is extremely complex, sometimes with hundreds of steps, each with dozens of parameters. One European project has developed ... | |
 Remembering the future November 15, 2007 | User rating: 4.8 / 5 after 12 vote(s)
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As electronics designers cram more and more components onto each chip, current technologies for making random-access memory (RAM) are running out of room. European researchers have a strong position in a new ... | |
Elpida Develops a 65nm-Process 1-Gigabit DDR2 SDRAM, World's Smallest Chip November 07, 2007 | User rating: 4 / 5 after 5 vote(s)
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Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), announced today that it has completed development of a 1-Gigabit DDR2 SDRAM based on new 65nm process technology. The 65nm process allows ... | |
 Toshiba develops new MRAM device which opens the way to giga-bits capacity November 06, 2007 | User rating: 4.5 / 5 after 43 vote(s)
| User comments: 2
Toshiba Corporation today announced important breakthroughs in key technologies for magnetoresistive random access memory (MRAM), a promising, next-generation semiconductor memory device. | |
 Pushing the limits of chip miniaturisation November 06, 2007 | User rating: 4.4 / 5 after 25 vote(s)
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Over the last four decades, computer chips have found their way into virtually every electronic device in the world. During that time they have become smaller, cheaper and more powerful, but, for a team of ... | |
New computer program automates chip debugging November 02, 2007 | User rating: 4.9 / 5 after 15 vote(s)
| User comments: 1
Fixing design bugs and wrong wire connections in computer chips after they've been fabricated in silicon is a tedious, trial-and-error process that often costs companies millions of dollars and months of time-to-market. | |
 IBM Pioneers Process to Turn Waste into Solar Energy October 30, 2007 | User rating: 4.7 / 5 after 21 vote(s)
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IBM today announced an innovative new semiconductor wafer reclamation process pioneered at its Burlington, Vermont manufacturing facility. The new process uses a specialized pattern removal technique to repurpose ... | |
 Toshiba Announces Gallium Nitride Power FET with World's Highest Output Power in Ku-band October 09, 2007 | User rating: 4.3 / 5 after 8 vote(s)
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Toshiba Corporation today announced that it has developed a gallium nitride (GaN) power field effect transistor (FET) for the Ku-band (12GHz to 18GHz) frequency range that achieves an output power of 65.4W ... | |
Elpida Introduces the World's Fastest DRAM Based on the Rambus XDR Memory Architecture October 05, 2007 | User rating: not shown ( 3 vote(s) ) | No comments yet
Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM) and Rambus Inc., one of the world's premier technology licensing companies specializing in high-speed chip architectures, today introduced ... | |
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